High-performance junction-free field-effect transistor based on blue phosphorene

Abstract Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results contact resistance. We propose a junction-free field-effect transistor consisting semiconducting monolayer blue phosphorene as channel material (with high carrier mobility) and metallic bilayer electrodes. The design minimizes Employing first-principles calculations along non-equilibrium Green’s function method, we demonstrate I on / off ratio up 2.6 × 10 4 remarkable transconductance 811 μS/μm.